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Document Number: MW5IC2030M Freescale Semiconductor Rev. 6, 1/2006 Replaced by MW5IC2030NBR1(GNBR1). There are no form, fit or function changes with this Technical Data
RF LDMOS Wideband Integrated Power Amplifiers
part replacement. N suffix added to part number to indicate transition to lead - free terminations.
The MW5IC2030 wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats. Final Application * Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 23 dB Drain Efficiency -- 20% ACPR @ 885 kHz Offset -- - 49 dBc in 30 kHz Channel Bandwidth Driver Application * Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 220 mA, IDQ2 = 240 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 24 dB ACPR @ 885 kHz Offset -- - 63 dBc in 30 kHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 27 Vdc, 1990 MHz, 30 Watts CW Output Power * Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 0 to 43 dBm CW Pout. * On - Chip Matching (50 Ohm Input, >4 Ohm Output) * Integrated Temperature Compensation Capability with Enable/Disable Function * On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) * Integrated ESD Protection * 200C Capable Plastic Package * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW5IC2030MBR1 MW5IC2030GMBR1
1930 - 1990 MHz, 30 W, 26 V GSM/GSM EDGE, W - CDMA, PHS RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
ARCHIVE INFORMATION
CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW5IC2030MBR1
CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW5IC2030GMBR1
VDS1 VRD2 VRG2 RFin VRD1 VDS2/RFout
GND VDS1 VRD2 VRG2 GND RFin VRD1 VRG1/VGS1 VGS2 NC GND
1 2 3 4 5 6 7 8 9 10 11
16 15
GND NC
14
VDS2/ RFout
13 12
NC GND
VRG1/VGS1 VGS2
Quiescent Current Temperature Compensation
(Top View) Note: Exposed backside flag is source terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2006. All rights reserved.
MW5IC2030MBR1 MW5IC2030GMBR1 1
RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value - 0.5, +65 - 0.5, +15 - 65 to +175 200 20 Unit Vdc Vdc C C dBm
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case CDMA Application (Pout = 5 W CW) Stage 1, 27 Vdc, IDQ = 160 mA Stage 2, 27 Vdc, IDQ = 230 mA Stage 1, 26 Vdc, IDQ = 300 mA Stage 2, 26 Vdc, IDQ = 1300 mA Symbol RJC 4.89 1.75 4.85 1.61 Value (1,2) Unit C/W
ARCHIVE INFORMATION
PHS Application (Pout = 12.6 W CW)
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model Class 1B (Minimum) A (Minimum) 3 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit CDMA Functional Tests (In Freescale 1900 MHz Test Fixture, 50 hm system) VDD = 27 Vdc, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 W Avg., 1960 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 885 kHz Offset. PAR = 9.8 dB @ 0.01 Probability on CCDF. Power Gain Drain Efficiency Input Return Loss Adjacent Channel Power Ratio Gain Flatness in 30 MHz BW, 1930 - 1990 MHz Gps D IRL ACPR GF 21.5 18 -- -- -- 23 20 - 18 - 49 0.2 -- -- - 10 - 47 0.3 dB % dB dBc dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(continued)
MW5IC2030MBR1 MW5IC2030GMBR1 2 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Pout @ 1 dB Compression Point, CW Deviation from Linear Phase in 30 MHz BW (Characterized from 1930 - 1990 MHz) Delay Part - to - Part Phase Variation Part - to - Part Gain Variation (Per Lot or Reel) Reference FET to RF FET Scaling Ratio Delta (Stages 1 and 2) Symbol P1dB Delay G Min -- -- -- -- -- -- Typ 30 1 2.25 10 1.5 10 Max -- -- -- -- -- -- Unit W ns dB % Typical Performances (In Freescale Test Fixture) VDD = 26 Vdc, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 W, f = 1960 MHz
Typical PHS Performances (In Freescale Test Fixture, 50 hm system) VDD = 26 Vdc, IDQ1 = 260 mA, IDQ2 = 1100 mA, Pout = 12.6 W, 1900 MHz, PHS Signal Mask
ARCHIVE INFORMATION
Drain Efficiency Input Return Loss Adjacent Channel Power Ratio (600 kHz Offset in 192 kHz BW)
D IRL ACPR
-- -- --
25 - 15 - 72
-- -- --
% dB dBc
MW5IC2030MBR1 MW5IC2030GMBR1 RF Device Data Freescale Semiconductor 3
ARCHIVE INFORMATION
Power Gain
Gps
--
24
--
dB
VD1
Z10 + C19 C9 C6 1 16 NC 15 C5 Z8 Z3 6 7 C14 VRG1/VGS1 8 9 C18 Z11 NC 10 NC 11 Quiescent Current Temperature Compensation NC 13 12 Z7 14 C1 C2 C3 Z6 Z4 Z5 Z9 C8 + VD2 C20 RF OUTPUT 2 3
VRD2 C12 VBIAS R2 R3 RF INPUT Z1 C7 VRD1 R6 C13 Z2
4 5
VBIAS1
C4
ARCHIVE INFORMATION
VBIAS2 R2 C10 R5 C16
+
C17
Z1 Z2 Z3 Z4 Z5 Z6
0.465 0.518 0.282 0.221 0.489 0.471
x 0.041 Microstrip x 0.041 Microstrip x 0.235 Microstrip x 0.081 Microstrip x 0.041 Microstrip x 0.025 Microstrip
Z7 Z8 Z9 Z10 Z11 PCB
0.200 x 0.025 Microstrip 0.274 x 0.050 Microstrip 0.615 x 0.050 Microstrip 0.450 x 0.025 Microstrip 0.340 x 0.014 Microstrip Rogers 4350, 0.020, r = 3.5
Figure 3. MW5IC2030MBR1(GMBR1) Test Circuit Schematic
Table 6. MW5IC2030MBR1(GMBR1) Test Circuit Component Designations and Values
Part C1 C2 C3 C4 C5, C6 C7 C8, C9, C10, C11 C12, C13, C14, C15, C16 C17, C18 C19, C20 R1, R3 R2 R4, R5, R6 Description 1.8 pF High Q Chip Capacitor (0603) 1.5 pF High Q Chip Capacitor (0603) 3.9 pF High Q Chip Capacitor (0603) 6.8 pF High Q Chip Capacitor (0805) 100 pF Class 1 NPO Chip Capacitors (0805) 4.7 pF Class 1 NPO Chip Capacitor (0805) 0.1 F X7R Chip Capacitors (1206) 0.01 F Class 2 X7R Chip Capacitors (0805) 22 F, 35 V Electrolytic Capacitors 330 F, 50 V Electrolytic Capacitors 1 kW, 5% Chip Resistors (0805) 499 W, 1% Chip Resistor (0805) 100 kW, 5% Chip Resistors (0805) Part Number 600S1R8AT - 250 - T 600S1R5AT - 250 - T 600S3R9AT - 250 - T 600S6R8AT - 250 - T GRM215CB1H101CZ01D GRM215CB1H4R7CZ01D C1206C104K5RACT C0805C103K5RACT ECE - 1AVKS220 ECA - 1HM331 Manufacturer ATC ATC ATC ATC Murata Murata Kemet Kemet Panasonic Panasonic
MW5IC2030MBR1 MW5IC2030GMBR1 4 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
R1
C11
R4
C15
+
RD2 C19 VD1 MW5IC2030M Rev 3 RG2 VD2 C20
R3
C9 C6 C12
C8
ARCHIVE INFORMATION
C13 C7 CUTOUT AREA C2 C1 C3
C17 C18 C15 C16 C14 R4 R5 C10
C4
RD1 C11 R1 VG2 NC VG1RG1 R2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 4. MW5IC2030MBR1(GMBR1) Test Circuit Component Layout
MW5IC2030MBR1 MW5IC2030GMBR1 RF Device Data Freescale Semiconductor 5
ARCHIVE INFORMATION
R6
C5
TYPICAL CHARACTERISTICS
23 Gps 32 31 30 29 21 VDD = 27 Vdc, Pout = 10 W (Avg.) IDQ1 = 160 mA, IDQ2 = 230 mA 100 kHz Tone Spacing D IRL 28 -26 -28 -30 19 18 1880 IMD 1900 1920 1940 1960 1980 2000 2020 f, FREQUENCY (MHz) -32 -34 -36 2040
22 G ps , POWER GAIN (dB)
D, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc)
-16 -17 -18 -19 -20 -21
20
ARCHIVE INFORMATION
IRL, INPUT RETURN LOSS (dB)
Figure 5. Two - Tone Broadband Performance @ Pout = 10 Watts Avg.
Gps 23 G ps , POWER GAIN (dB) VDD = 27 Vdc, Pout = 1 W (Avg.) IDQ1 = 160 mA, IDQ2 = 230 mA 100 kHz Tone Spacing IRL D
8 7 6
D, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc)
24
9
22
5 -46 -47 -48
-16 -17 -18 -19 -20 -21
21
20 19 1880
IMD
-49 -50 -51 2040
1900
1920
1940
1960
1980
2000
2020
f, FREQUENCY (MHz)
Figure 6. Two - Tone Broadband Performance @ Pout = 1 Watt Avg.
25 G ps , POWER GAIN (dB) 24 23 22 21 VDD = 27 Vdc 20 f1 = 1960 MHz, f2 = 1960.1 MHz Two-Tone Measurements 19 0.1 1 IDQ1 = 120 mA IDQ2 = 175 mA IDQ1 = 160 mA IDQ2 = 230 mA
IDQ1 = 200 mA IDQ2 = 300 mA
IMD, INTERMODULATION DISTORTION (dBc)
26
10
100
-10 -15 VDD = 27 Vdc -20 IDQ1 = 160 mA, IDQ2 = 230 mA -25 f1 = 1960 MHz, f2 = 1960.1 MHz -30 Two-Tone Measurements -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 0.1 1
3rd Order 5th Order 7th Order
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Two - Tone Power Gain versus Output Power
Figure 8. Intermodulation Distortion Products versus Output Power
MW5IC2030MBR1 MW5IC2030GMBR1 6 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
-15 IMD, INTERMODULATION DISTORTION (dBc) -20 -25 -30 -35 -40 -45 -50 -55 -60 0.1 1 10 100 TWO-TONE SPACING (MHz) 7th Order 3rd Order 5th Order VDD = 27 Vdc, Pout = 30 W (PEP), IDQ1 = 160 mA, IDQ2 = 230 mA, Two-Tone Measurements (f1 + f2/2) = Center Frequency of 1960 MHz 50 49 Pout , OUTPUT POWER (dBm) 48 47 46 45 44 43 42 41 40 39 15 16 17 18 19 -30_C 25_C 85_C Actual VDD = 27 Vdc IDQ1 = 160 mA, IDQ2 = 230 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 1960 MHz Ideal P3dB = 44.91 dBm (31 W) P1dB = 44.69 dBm (29.5 W)
ARCHIVE INFORMATION
Pin, INPUT POWER (dBm)
Figure 9. Intermodulation Distortion Products versus Tone Spacing
30 VDD = 27 Vdc, IDQ1 = 160 mA, IDQ2 = 230 mA, f = 1960 MHz 25 20 15 10 5 0 29 30 31 32 33 34 35 36 37 38 39 40 41 Pout, OUTPUT POWER (dBm) Gps 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) D IM3 ACPR -50 -55 -30 G ps , POWER GAIN (dB) IM3 (dBc), ACPR (dBc) -35 -40 -45 -25 27 26 25 24 23 22 21 20 19 18 17 0
Figure 10. Pulse CW Output Power versus Input Power
50 TC = -30_C 25_C 85_C Gps -30_C 25_C 85_C 45 40 35 30 25 20 D VDD = 27 Vdc IDQ1 = 160 mA IDQ2 = 230 mA f = 1960 MHz 10 100 15 10 5 0
1
Pout, OUTPUT POWER (WATTS) CW
Figure 11. 2 - Carrier W - CDMA ACPR, IM3, Power Gain, and Drain Efficiency versus Output Power
25 24 23 22 S21 (dB) 21 20 19 18 17 16 15 0 20 40 60 Pout, OUTPUT POWER (WATTS) CW IDQ1 = 160 mA, IDQ2 = 230 mA f = 1960 MHz VDD = 12 V 24 V 28 V 32 V 20 10 0 40 30
Figure 12. Power Gain and Drain Efficiency versus Output Power
0 S21 -5 -10 -15 -20 S11 -10 -20 -30 1000 VDD = 27 Vdc, Pout = 30 W IDQ1 = 160 mA, IDQ2 = 230 mA 1500 2000 f, FREQUENCY (MHz) 2500 -25 -30
G ps , POWER GAIN (dB)
-35 3000
Figure 13. Power Gain versus Output Power
Figure 14. Broadband Frequency Response
MW5IC2030MBR1 MW5IC2030GMBR1 RF Device Data Freescale Semiconductor 7
S11 (dB)
ARCHIVE INFORMATION
20
21
22
23
24
25
26 27
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
TYPICAL CHARACTERISTICS
EVM, ERROR VECTOR MAGNITUDE (% rms) 27 26 G ps , POWER GAIN (dB) 25 24 23 85_C 22 21 20 1920 VDD = 27 Vdc, Pout = 5 W (CW), IDQ1 = 160 mA, IDQ2 = 230 mA f1 = 1960 MHz, f2 = 1960.1 MHz, Two-Tone Measurements 1930 1940 1950 1960 1970 1980 1990 2000 25_C TC = -30_C 8 VDD = 27 Vdc IDQ1 = 160 mA IDQ2 = 230 mA f = 1960 MHz D 85_C 30 25_C 4 TC = -30_C 2 Source EVM = 0.60% 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 10 20 40 D, DRAIN EFFICIENCY (%)
6
0
0
ARCHIVE INFORMATION
f, FREQUENCY (MHz)
Figure 15. Power Gain versus Frequency
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) -45 -50 -55 -60 -65 SR @ 400 kHz -70 25_C -75 -80 -85 0 10 Pout, OUTPUT POWER (WATTS) AVG. 100 SR @ 600 kHz -30_C 85_C VDD = 27 Vdc IDQ1 = 160 mA IDQ2 = 230 mA EDGE Modulation f = 1960 MHz TC = -30_C ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT 1 & 2, ALTERNATE 1 & 2 CHANNEL POWER RATIO (dBc)
Figure 16. EVM and Drain Efficiency versus Output Power
-40 -45 -50 -55 -60 ACPR -65 -70 -75 ALT2 VDD = 27 Vdc IDQ1 = 160 mA, IDQ2 = 230 mA f = 1960 MHz N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
85_C 25_C
ALT1 -80 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Pout, IS-95 OUTPUT POWER (dBm)
Figure 17. Spectral Regrowth at 400 kHz and 600 kHz versus Output Power
-10 MTTF FACTOR (HOURS X AMPS2)
Figure 18. Single - Carrier N - CDMA ACPR, ALT1 and ALT2 versus Output Power
1.E+09
-20 INSERTION PHASE ( ) _
1.E+08
2nd Stage
-30 TC = -30_C 25_C -40 85_C -50
1.E+07 1st Stage
-60 0 1 10 100 Pout, OUTPUT POWER (WATTS) CW
1.E+06 90
100
110
120
130
140
150
160
170
180 190
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 19. Insertion Phase versus Output Power
Figure 20. MTTF Factor versus Junction Temperature MW5IC2030MBR1 MW5IC2030GMBR1 8 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
Zload*
f = 1800 MHz
f = 1800 MHz f = 2200 MHz f = 2200 MHz Zin Zo = 50
ARCHIVE INFORMATION
VDD = 27 V, IDQ1 = 160 mA, IDQ2 = 230 mA f MHz 1800 1850 1930 1960 1990 2050 2100 2150 2200 Zin Zin 49.7 - j9.3 47.7 - j9.8 44.8 - j8.5 44.0 - j7.3 44.6 - j5.6 45.7 - j8.6 42.5 - j8.3 40.6 - j6.8 39.3 - j5.0 Zload 6.9 - j0.3 6.9 - j0.3 6.7 - j0.1 6.6 - j0.0 6.6 + j0.1 6.4 + j0.4 6.2 + j0.8 6.1 + j1.1 6.0 + j1.6
= Device input impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground.
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 21. Series Equivalent Input and Load Impedance MW5IC2030MBR1 MW5IC2030GMBR1 RF Device Data Freescale Semiconductor 9
ARCHIVE INFORMATION
DRIVER APPLICATION PERFORMANCE
VD1 Z10 + C19 C9 C6 1 VRD2 C12 VBIAS R2 R3 RF INPUT Z1 C7 VRD1 C14 7 VRG1/VGS1 8 9 C18 Z11 VBIAS2 R2 C10 R5 C16 + NC 10 NC 11 Quiescent Current Temperature Compensation NC 13 12 Z7 R6 C13 Z2 2 3 4 5 Z3 6 14 C1 C2 C3 Z6 Z4 Z5 Z8 16 NC 15 C5 Z9 C8 + VD2 C20 RF OUTPUT
ARCHIVE INFORMATION
VBIAS1 R1 C11 R4 C15
C4
+
C17
Z1 Z2 Z3 Z4 Z5 Z6
0.465 0.518 0.282 0.221 0.489 0.471
x 0.041 Microstrip x 0.041 Microstrip x 0.235 Microstrip x 0.081 Microstrip x 0.041 Microstrip x 0.025 Microstrip
Z7 Z8 Z9 Z10 Z11 PCB
0.200 x 0.025 Microstrip 0.274 x 0.050 Microstrip 0.615 x 0.050 Microstrip 0.450 x 0.025 Microstrip 0.340 x 0.014 Microstrip Rogers 4350, 0.020, r = 3.5
Figure 22. MW5IC2030MBR1(GMBR1) Test Circuit Schematic for Driver Application Tests
Table 7. MW5IC2030MBR1(GMBR1) Test Circuit Component Designations and Values for Driver Application Tests
Part C1 C2 C3 C4 C5, C6 C7 C8, C9, C10, C11 C12, C13, C14, C15, C16 C17, C18 C19, C20 R1, R3 R2 R4, R5, R6 Description 2.2 pF High Q Chip Capacitor (0603) 1.8 pF High Q Chip Capacitor (0603) 3.9 pF High Q Chip Capacitor (0603) 6.8 pF High Q Chip Capacitor (0805) 100 pF Class 1 NPO Chip Capacitors (0805) 4.7 pF Class 1 NPO Chip Capacitor (0805) 0.1 F X7R Chip Capacitors (1206) 0.01 F Class 2 X7R Chip Capacitors (0805) 22 F, 35 V Electrolytic Capacitors 330 F, 50 V Electrolytic Capacitors 1 kW, 5% Chip Resistors (0805) 499 W, 1% Chip Resistor (0805) 100 kW, 5% Chip Resistors (0805) Part Number 600S2R2AT - 250 - T 600S1R8AT - 250 - T 600S3R9AT - 250 - T 600S6R8AT - 250 - T GRM215CB1H101CZ01D GRM215CB1H4R7CZ01D C1206C104K5RACT C0805C103K5RACT ECE - 1AVKS220 ECA - 1HM331 Manufacturer ATC ATC ATC ATC Murata Murata Kemet Kemet Panasonic Panasonic
MW5IC2030MBR1 MW5IC2030GMBR1 10 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
DRIVER APPLICATION PERFORMANCE
RD2 C19 VD1 MW5IC2030M Rev 3 RG2 VD2 C20
R3
C9 C6
C8
ARCHIVE INFORMATION
C12 R6 C13 C7 CUTOUT AREA C2 C1 C3 C5
C17 C18 C15 C16 C14 R4 R5 C10
C4
RD1 C11 R1 VG2 NC VG1RG1 R2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 23. MW5IC2030MBR1(GMBR1) Test Circuit Component Layout for Driver Application Tests
MW5IC2030MBR1 MW5IC2030GMBR1 RF Device Data Freescale Semiconductor 11
ARCHIVE INFORMATION
TYPICAL DRIVER APPLICATION CHARACTERISTICS
-60 -61 -62 -63 ACPR (dBc) -64 -65 -66 -67 -68 -69
VDD = 27 Vdc, IDQ1 = 220 mA, IDQ2 = 240 mA f1 = 1957.5 MHz, f2 = 1960 MHz, 2-Carrier N-CDMA 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF)
ARCHIVE INFORMATION
21
22
23
24
25
26
27
28
29
30
Pout, OUTPUT POWER (dBm)
Figure 24. 2 - Carrier N - CDMA ACPR versus Output Power
MW5IC2030MBR1 MW5IC2030GMBR1 12 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
-70 20
Zo = 50 f = 2200 MHz f = 1800 MHz f = 2200 MHz Zload f = 1800 MHz Zin
ARCHIVE INFORMATION
VDD = 27 V, IDQ1 = 220 mA, IDQ2 = 240 mA f MHz 1800 1850 1930 1960 1990 2050 2100 2150 2200 Zin Zin 49.7 - j9.3 47.7 - j9.8 44.8 - j8.5 44.0 - j7.3 44.6 - j5.6 45.7 - j8.6 42.5 - j8.3 40.6 - j6.8 39.3 - j5.0 Zload 9.8 - j7.0 8.9 - j6.3 7.2 - j4.6 6.8 - j3.9 6.5 - j3.4 5.9 - j2.3 5.6 - j1.5 5.4 - j0.7 5.2 + j0.1
= Device input impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Z
in
Z
load
Figure 25. Series Equivalent Input and Load Impedance for Driver Application MW5IC2030MBR1 MW5IC2030GMBR1 RF Device Data Freescale Semiconductor 13
ARCHIVE INFORMATION
PACKAGE DIMENSIONS
2X
B
PIN ONE INDEX
E1
aaa
M
r1 CA B
A
NOTE 6
4X
aaa
M
b1 CA
e1 e2 D1 e b2 CA
10X 4X
6X
e3 b3 aaa M C A DM
2X
aaa
M
b aaa
M
CA
E
DATUM PLANE
H A
c1
C
SEATING PLANE
F Y
ZONE "J"
E2
Y
A1 7 A2
DIM A A1 A2 D D1 E E1 E2 F M N b b1 b2 b3 c1 e e1 e2 e3 r1 aaa INCHES MIN MAX .100 .104 .038 .044 .040 .042 .928 .932 .810 BSC .551 .559 .353 .357 .346 .350 .025 BSC .600 --- .270 --- .011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.96 1.12 1.02 1.07 23.57 23.67 20.57 BSC 14.00 14.20 8.97 9.07 8.79 8.89 0.64 BSC 15.24 --- 6.86 --- 0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 .10
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. 7. DIM A2 APPLIES WITHIN ZONE "J" ONLY.
CASE 1329 - 09 ISSUE K TO - 272 WB - 16 PLASTIC MW5IC2030MBR1
MW5IC2030MBR1 MW5IC2030GMBR1 14 RF Device Data Freescale Semiconductor
CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC
N VIEW Y - Y
r1 aaa M C A B
2X PIN ONE INDEX
E1
B
A
4X
aaa
M
b1 CA
e1 e2 D1 e b2 CA
10X 4X
6X
e3
2X
b3 aaa M C A
D
M
aaa
M
aaa
M
b CA
E
DETAIL Y DATUM PLANE
H A c1 E2 Y Y C
SEATING PLANE
A2
INCHES MIN MAX .100 .104 .001 .004 .099 .110 .928 .932 .810 BSC .429 .437 .353 .357 .346 .350 .018 .024 .01 BSC .600 --- .270 --- .011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 2 8 .004 MILLIMETERS MIN MAX 2.54 2.64 0.02 0.10 2.51 2.79 23.57 23.67 20.57 BSC 10.90 11.10 8.97 9.07 8.79 8.89 4.90 5.06 0.25 BSC 15.24 --- 6.86 --- 0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 2 8 .10
L1
GAGE PLANE
t
L DETAIL Y
A1
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SINK.
CASE 1329A - 03 ISSUE D TO - 272 WB - 16 GULL PLASTIC MW5IC2030GMBR1
MW5IC2030MBR1 MW5IC2030GMBR1 RF Device Data Freescale Semiconductor 15
EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE
N E2 VIEW Y - Y
DIM A A1 A2 D D1 E E1 E2 L L1 M N b b1 b2 b3 c1 e e1 e2 e3 r1 t aaa
NOTE 6
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MW5IC2030MBR1 MW5IC2030GMBR1
Rev. 16 6, 1/2006 Document Number: MW5IC2030M
RF Device Data Freescale Semiconductor

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